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IRFB4310 SIZE, TO- 220

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DatasheetsPDF.com
Power MOSFET. IRFB4310 Datasheet

IRFB4310 MOSFET. Datasheet pdf. Equivalent

Part
IRFB4310
Description
HEXFET Power MOSFET
Manufacture
International Rectifier
Datasheet
Download IRFB4310 Datasheet

International Rectifier IRFB4310

IRFB4310; Applications l High Efficiency Synchrono us Rectification in SMPS l Uninterrupti ble Power Supply l High Speed Power Swi tching l Hard Switched and High Frequen cy Circuits Benefits l Worldwide Best R DS(on) in TO-220 l Improved Gate, Avala nche and Dynamic dV/dt Ruggedness l Ful ly Characterized Capacitance and Avalan che SOA l Enhanced body diode dV/dt and dI/dt Capability .

International Rectifier IRFB4310

G PD – 96894A IRFB4310 IRFS4310 IRFSL4 310 HEXFET® Power MOSFET D VDSS RDS( on) typ. max. S ID 51.60m0V: 7.0m: 140 A GDS TO-220AB IRFB4310 GDS D2Pak IRF S4310 GDS TO-262 IRFSL4310 Absolute M aximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V dPulsed Drain Curr.

International Rectifier IRFB4310

ent Maximum Power Dissipation Linear De rating Factor VGS dV/dt Gate-to-Sourc e Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temper ature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Ch aracteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Curre.

Recommendation IRFB4310 Datasheet

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80 in stock

Availability: 80 In stock
SKU: AA-4300 Category: Tag:

Description

DatasheetsPDF.com
Power MOSFET. IRFB4310 Datasheet

IRFB4310 MOSFET. Datasheet pdf. Equivalent

Part
IRFB4310
Description
HEXFET Power MOSFET
Manufacture
International Rectifier
Datasheet
Download IRFB4310 Datasheet

International Rectifier IRFB4310

IRFB4310; Applications l High Efficiency Synchrono us Rectification in SMPS l Uninterrupti ble Power Supply l High Speed Power Swi tching l Hard Switched and High Frequen cy Circuits Benefits l Worldwide Best R DS(on) in TO-220 l Improved Gate, Avala nche and Dynamic dV/dt Ruggedness l Ful ly Characterized Capacitance and Avalan che SOA l Enhanced body diode dV/dt and dI/dt Capability .

International Rectifier IRFB4310

G PD – 96894A IRFB4310 IRFS4310 IRFSL4 310 HEXFET® Power MOSFET D VDSS RDS( on) typ. max. S ID 51.60m0V: 7.0m: 140 A GDS TO-220AB IRFB4310 GDS D2Pak IRF S4310 GDS TO-262 IRFSL4310 Absolute M aximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V dPulsed Drain Curr.

International Rectifier IRFB4310

ent Maximum Power Dissipation Linear De rating Factor VGS dV/dt Gate-to-Sourc e Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temper ature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Ch aracteristics EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Curre.

Recommendation IRFB4310 Datasheet

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)

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