FQA38N3O TO -247
৳ 260.00 ৳ 250.00
Quick Overview
38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
• Low gate charge (Typ. 90 nC)
• Low crss (Typ. 70 pF)
• 100% avalanche tested
• RoHS compliant
Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 300V
Continuous Drain Current (Id) 38.4A
Drain-Source Resistance (Rds On) 85mOhms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 120 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 290W
19 in stock
Description
38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
• Low gate charge (Typ. 90 nC)
• Low crss (Typ. 70 pF)
• 100% avalanche tested
• RoHS compliant
Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 300V
Continuous Drain Current (Id) 38.4A
Drain-Source Resistance (Rds On) 85mOhms
Gate-Source Voltage (Vgs) 30V
Gate Charge (Qg) 120 nC
Operating Temperature Range -55 – 150°C
Power Dissipation (Pd) 290W
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