FDA59N30 TO-247

Quick Overview

Products description:
Brand: ON semiconductors
Part Number FDA59N30
Forward Diode Voltage 30 V
Mounting Type Through hole
Maximum Operating Temperature + 150 Degree C
Maximum Power Dissipation 500 W

Product Description:
The FDA59n30 MOSFET Transistoris a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a core of integrated circuit and it can be designed and fabricated in a single chip because of these very small sizes. The MOSFET is a four terminal device with source(S), gate (G), drain (D) and body (B) terminals. The body of the MOSFET is frequently connected to the source terminal so making it a three terminal device like field effect transistor. The MOSFET is very far the most common transistor and can be used in both analog and digital circuits.
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